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| Transistor 2SC1383, 2SC1384 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SA683 and 2SA684 5.90.2 Unit: mm 4.90.2 q q Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA683 and 2SA684. (Ta=25C) Ratings 30 60 25 50 5 1.5 1 1 150 -55 ~ +150 Unit V 2.540.15 +0.3 +0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SC1383 2SC1384 2SC1383 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol emitter voltage 2SC1384 Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V 0.45-0.1 0.45-0.1 1.27 +0.2 V A A W C C 1.27 13.50.5 0.7-0.2 0.70.1 8.60.2 s Features s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SC1383 2SC1384 2SC1383 2SC1384 (Ta=25C) Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob *1 Conditions VCB = 20V, IE = 0 IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 500mA*2 VCE = 5V, IB = 1A*2 IC = 500mA, IB = 50mA*2 IC = 500mA, IB = 50mA*2 VCB = 10V, IE = -50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ 3.2 1 2 3 1:Emitter 2:Collector 3:Base EIAJ:SC-51 TO-92L Package max 0.1 Unit A V 30 60 25 50 5 85 50 160 100 0.2 0.85 200 11 *2 V V 340 Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance 0.4 1.2 V V MHz 20 pF Pulse measurement *1h FE1 Rank classification Q 85 ~ 170 R 120 ~ 240 S 170 ~ 340 Rank hFE1 1 Transistor PC -- Ta 1.2 1.5 Ta=25C 2SC1383, 2SC1384 IC -- VCE 1.2 VCE=10V Ta=25C 1.0 IC -- I B Collector power dissipation PC (W) 1.0 1.25 Collector current IC (A) 0.8 1.0 8mA 7mA 6mA 5mA 4mA Collector current IC (A) IB=10mA 9mA 0.8 0.6 0.75 0.6 0.4 0.5 3mA 2mA 0.4 0.2 0.25 1mA 0.2 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 0 0 2 4 6 8 10 12 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (mA) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 10 3 1 Ta=75C 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03 25C -25C VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 100 30 10 3 25C 1 75C 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C IC/IB=10 600 hFE -- IC VCE=10V Forward current transfer ratio hFE 500 400 300 Ta=75C 200 25C 100 -25C 0.1 0.3 1 3 10 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) fT -- IE 200 180 Cob -- VCB 50 120 VCER -- RBE Collector to emitter voltage VCER (V) IE=0 f=1MHz Ta=25C IC=10mA Ta=25C 100 Collector output capacitance Cob (pF) VCB=10V Ta=25C 45 40 35 30 25 20 15 10 5 0 Transition frequency fT (MHz) 160 140 120 100 80 60 40 20 0 -1 80 60 2SC1384 40 2SC1383 20 -3 -10 -30 -100 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 Emitter current IE (mA) Collector to base voltage VCB (V) Base to emitter resistance RBE (k) 2 Transistor ICEO -- Ta 104 VCE=10V 10 3 ICP 103 2SC1383, 2SC1384 Area of safe operation (ASO) Single pulse Ta=25C Collector current IC (A) 1 0.3 0.1 0.03 IC t=10ms t=1s ICEO (Ta) ICEO (Ta=25C) 102 2SC1383 0.3 1 3 10 10 0.01 0.003 1 0 20 40 60 80 100 120 140 160 0.001 0.1 30 2SC1384 100 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) 3 |
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